Methods of making lateral junction field effect transistors...

Details Methods of making lateral junction field effect transistors... Methods of making lateral junction field effect transistors...

H - Electricity

01

L

H01L 21/336 (2006.01) H01L 21/20 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2721363

Methods of making a semiconductor device such as a lateral junction field effect transistor (JFET) are described. The methods are self-aligned and involve selective epitaxial growth using a regrowth mask material to form the gate or the source/ drain regions of the device. The methods can eliminate the need for ion implantation. The device can be made from a wide band-gap semiconductor material such as SiC. The regrowth mask material can be TaC. The devices can be used in harsh environments including applications involving exposure to radiation and/or high temperatures.

L'invention porte sur des procédés de fabrication d'un dispositif à semi-conducteurs tel qu'un transistor à effet de champ à jonction latérale (JFET). Les procédés sont auto-alignés et mettent en jeu une croissance épitaxiale sélective utilisant un matériau de masque de recroissance pour former les régions de grille ou de source/drain du dispositif. Les procédés peuvent éliminer le besoin d'une implantation d'ions. Le dispositif peut être fait à partir d'un matériau semi-conducteur à bande interdite large tel que SiC. Le matériau de masque de recroissance peut être TaC. Les dispositifs peuvent être utilisés dans des environnements difficiles, comprenant des applications mettant en jeu une exposition à un rayonnement et/ou à des températures élevées.

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