Method of producing a strip of nanocrystalline material and...

H - Electricity – 01 – F

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H01F 41/02 (2006.01) B21B 1/00 (2006.01) B21B 27/00 (2006.01) H01F 1/147 (2006.01) H01F 1/153 (2006.01)

Patent

CA 2609799

The invention relates to a method of producing a strip of nanocrystalline material which is obtained from a wound ribbon that is cast in an amorphous state, having atomic composition [Fe1-a-bCoaNib]100-x-y-z-.alpha.-.beta.-.gamma.CuxSiyBzNb.alpha.M'.beta.M .gamma., M' being at least one of elements V, Cr, Al and Zn, and M being at least one of elements C, Ge, P, Ga, Sb, In and Be, with: a <= 0.07 and b <= 0.1, 0.5 <= x <= 1.5 and 2 <= .alpha. <= 5, 10 <= y <= 16.9 and 5 <= z <= 8, .beta. <= 2 and .gamma. <= 2. According to the invention, the amorphous ribbon is subjected to crystallisation annealing, in which the ribbon undergoes annealing in the unwound state, passing through at least two S-shaped blocks under voltage along an essentially longitudinal axial direction of the ribbon, such that the ribbon is maintained at an annealing temperature of between 530 °C and 700 °C for between 5 and 120 seconds and under axial tensile stress of between 2 and 1000 MPa. The tensile stress applied to the amorphous ribbon, the displacement speed of the ribbon during annealing and the annealing time and temperature are all selected such that the cross-section profile of the strip is not in the form of a .OMEGA. and the maximum deflection of the cross-section of the strip is less than 3 % of the width of the strip and preferably less than 1 % of the width. The invention also relates to the strip and the core thus obtained and to the device used to implement said method.

L'invention concerne un procédé de fabrication d'une bande en matériau nanocristallin obtenue à partir d'un ruban coulé dans un état amorphe, de composition atomique : [Fe1-a-bCoaNib]100-x-y-2-.alpha.-.beta.- .gamma.CuxSiyBzNb.alpha.M'.beta.M''.gamma. M' étant l'un au moins des éléments V, Cr, Al et Zn, M" étant l'un au moins des éléments C, Ge, P, Ga, Sb, In et Be, avec : a <= 0,07 et b <= 0,1 0,5 <= x <=1 ,5 et 2 <= .alpha. <= 5 10 <= y <= 16,9 et 5 <= z <= 8 .beta. <= 2 et .gamma. <= 2 et en soumettant le ruban amorphe à un recuit de cristallisation, dans lequel on soumet le ruban au recuit à l'état déroulé, en défilement au travers d'au moins deux blocc en S et sous tension dans une direction sensiblement longitudinale axiale du ruban, de telle sorte que le ruban soit maintenu à une température de recuit comprise entre 530~C et 700~C, pendant une durée comprise entre 5 et 120 secondes, sous une contrainte de traction axiale comprise entre 2 et 1000 MPa, la contrainte de traction subie par ledit ruban amorphe, sa vitesse de défilement lors dudit recuit, le temps et la température de recuit étant choisis de telle sorte que le profil de section de la bande ne soit pas en forme de .OMEGA., et présente une flèche maximale de la section transversale de la bande inférieure à 3% de la largeur de la bande, et de préférence inférieure à 1% de la largeur, ainsi que la bande et le tore obtenu et le dispositif de mise en AEuvre du procédé.

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