Solid state photosensitive devices which employ isolated...

H - Electricity – 01 – L

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H01L 31/04 (2006.01) H01G 9/20 (2006.01)

Patent

CA 2589347

Solid state photosensitive devices including photovoltaic devices are provided which comprise a first electrode and a second electrode in superposed relation; and at least one isolated Light Harvesting Complex (LHC) between the electrodes. Preferred photosensitive devices comprise an electron transport layer formed of a first photoconductive organic semiconductor material, adjacent to the LHC, disposed between the first electrode and the LHC; and a hole transport layer formed of a second photoconductive organic semiconductor material, adjacent to the LHC, disposed between the second electrode and the LHC. Solid state photosensitive devices of the present invention may comprise at least one additional layer of photoconductive organic semiconductor material disposed between the first electrode and the electron transport layer; and at least one additional layer of photoconductive organic semiconductor material, disposed between the second electrode and the hole transport layer. Methods of generating photocurrent are provided which comprise exposing a photovoltaic device of the present invention to light. Electronic devices are provided which comprise a solid state photosensitive device of the present invention.

L~invention concerne des dispositifs photosensibles semi-conducteurs englobant des dispositifs photovoltaïques, qui comprennent une première électrode et une seconde électrode superposées ; et au moins un complexe récolteur de lumière isolé (Light Harvesting Complex - LHC) entre les électrodes. Les dispositifs photosensibles préférés comprennent une couche de transport d~électrons formée d~un premier matériau semi-conducteur organique photoconducteur, adjacent au complexe LHC, disposée entre la première électrode et le complexe LHC ; et une couche de transport de trous formée d~un second matériau semi-conducteur organique photoconducteur, adjacent au complexe LHC, disposée entre la seconde électrode et le complexe LHC. Les dispositifs photosensibles semi-conducteurs de la présente invention peuvent comprendre au moins une couche supplémentaire de matériau semi-conducteur organique photoconducteur disposée entre la première électrode et la couche de transport d~électrons ; et au moins une couche supplémentaire de matériau semi-conducteur organique photoconducteur, disposée entre la seconde électrode et la couche de transport de trous. Elle porte également sur des procédés de génération de photocourant, consistant à exposer un dispositif photovoltaïque de la présente invention à la lumière. Elle concerne enfin des dispositifs électroniques, comprenant un dispositif photosensible semi-conducteur de la présente invention.

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