Thermophotovoltaic semiconductor device

Details Thermophotovoltaic semiconductor device Thermophotovoltaic semiconductor device

H - Electricity

01

L

H01L 31/058 (2006.01) H01L 31/04 (2006.01)

Patent

CA 2298790

A technique for enhancing the generation of carriers (ex. Electrons and/or holes) in semiconductor devices such as photovoltaic cells and the like, receiving radiation from a heated surface, through the use of micron juxtaposition of the surface of the device and the heated surface and with the gap thereinbetween preferably evacuated.

La présente invention concerne un procédé permettant de renforcer la génération des porteurs de charges, tels que les électrons et/ou les trous, dans des semi-conducteurs, tels que des cellules photovoltaïques et similaires, recevant un rayonnement d'une surface chauffée. En l'occurrence, on dispose la surface du semi-conducteur à environ un micron de la surface chauffée, le vide ayant été de préférence réalisé dans l'intervalle entre les deux surfaces.

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