Method and device for treating a wafer

Details Method and device for treating a wafer Method and device for treating a wafer

H - Electricity

01

L

H01L 31/0224 (2006.01) C25D 5/02 (2006.01) C25D 7/12 (2006.01) C25D 17/00 (2006.01)

Patent

CA 2761459

In a method for coating a wafer to produce solar cells, a metal such as nickel, copper, or silver is deposited on the wafer in a continuous process in a coating bath containing said metal. A wafer is inserted into the coating bath, and at a time at which a first area of the wafer already extends into the coating bath but a second area does not yet extend into the coating bath, a current surge is applied to the second area of the wafer to initiate the galvanic deposition of the metal on the first area of the wafer reaching into the coating bath for a subsequent further automatic coating, with the wafer completely inserted into the coating bath, also of the remaining area of the wafer without further current surge or current flow.

L'invention concerne un procédé de revêtement d'une plaquette pour la production de cellules solaires selon lequel on dépose en continu sur la plaquette un métal, tel que le nickel, le cuivre ou l'argent, contenu dans un bain de revêtement. Selon l'invention, on introduit une plaquette dans le bain de revêtement et, à l'instant où une première zone de la plaquette a déjà pénétré dans le bain de revêtement alors qu'une deuxième zone est encore à l'extérieur, on applique une impulsion de courant à la deuxième zone de la plaquette pour déclencher le dépôt galvanique du métal sur la première zone de la plaquette se trouvant dans le bain de revêtement, l'application du revêtement se poursuivant automatiquement sans nouvelle impulsion ou flux de courant pour couvrir également la surface restante lorsque la plaquette est entièrement immergée dans le bain de revêtement.

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