Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

356/149

H01L 29/26 (2006.01)

Patent

CA 2033281

ABSTRACT OF THE DISCLOSURE A semiconductor device includes an FET having side gate electrodes. The FET has a plurality of side gate electrodes, and the side gate electrodes, side gate input terminals and lead wires connecting them are arranged such that a difference between electrical lengths from the side gate electrodes to the input terminals (pads) is smaller than a quarter wavelength of input signals thereto. Thus, even if a microwave signal is applied to the side gate input terminals, the signals reach the side gate electrodes with substantially same phase and the side gate effect extends to the entire gate electrode.

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