Method for producing a copy protection for an electronic...

Details Method for producing a copy protection for an electronic... Method for producing a copy protection for an electronic...

H - Electricity

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H01L 23/58 (2006.01) B81C 1/00 (2006.01) C03B 19/00 (2006.01) C03C 4/12 (2006.01) C03C 14/00 (2006.01) C03C 15/00 (2006.01) C03C 17/02 (2006.01) C03C 17/34 (2006.01) C23C 14/10 (2006.01) H01L 21/316 (2006.01) H01L 21/50 (2006.01) H01L 21/56 (2006.01) H01L 21/768 (2006.01) H01L 23/10 (2006.01) H01L 23/29 (2006.01) H01L 23/31 (2006.01) H01L 23/48 (2006.01) H01L 51/52 (2006.01) H01L 23/498 (2006.01) H05K 3/28 (2006.01)

Patent

CA 2480797

The invention relates to a method for producing a copy protection for an integrated circuit. The aim of the invention is to provide an effective and reliable copy protection in order to prevent an unauthorized copying of an integrated circuit. To this end, the invention presents a method comprising the following steps: providing a substrate (1) having semiconductor structures (2) on at least one first side (1a) of the substrate (1); providing a material for coating the substrate (1), and; coating the substrate (1) with a copy protection layer (4). It has been proven advantageous to produce the copy protection layer (4) by vapor depositing a silicate glass so that an etching method, which removes the copy protection layer, also acts upon the substrate (1) whereby at least partially destroying the semiconductor structures (2).

L'invention vise, afin d'empêcher tout piratage d'un circuit de commutation intégré, de mettre au point un système contre la copie, qui soit efficace et fiable. Il est prévu un procédé comprenant les étapes suivantes : préparer un substrat (1) présentant des structures à semi-conducteurs (2) sur au moins une première face (1a) dudit substrat (1) ; préparer un matériau pour recouvrir ledit substrat (1) ; munir ledit substrat (1) d'une couche de protection contre la copie (4). Il s'est avéré particulièrement avantageux de produire la couche de protection contre la copie par dépôt par vaporisation d'un verre de silicate, du fait qu'ainsi, un procédé de gravure qui dissout la couche de protection contre la copie, attaque également le substrat (1), de sorte que les structures à semi-conducteurs (2) soient en partie détruites.

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