Process for preparing high crystallinity oxide thin film

Details Process for preparing high crystallinity oxide thin film Process for preparing high crystallinity oxide thin film

C - Chemistry, Metallurgy

30

B

C30B 23/02 (2006.01) C23C 14/00 (2006.01) C23C 14/08 (2006.01) C23C 14/24 (2006.01) H01L 21/20 (2006.01) H01L 39/24 (2006.01)

Patent

CA 2127323

A process for preparing an oxide thin film which has a crystalline, clean and smooth surface on a substrate. The process is conducted by using an apparatus comprising a vacuum chamber in which an oxidizing gas of O2 including O3 can be supplied near the substrate so that pressure around the substrate can be increased while maintaining high vacuum near an evaporation source and Knudsen cell evaporation sources arranged in the vacuum chamber wherein the substrate is heated, molecular beam of constituent atoms of the oxide excluding oxygen are supplied from the K cell evaporation sources and an oxidizing gas is locally supplied to the vicinity of the substrate.

Cette invention concerne un procédé de dépôt d'une pellicule d'oxyde en couche mince à surface cristalline propre et lisse. Le procédé est réalisé au moyen d'un appareil comprenant une enceinte sous vide dans laquelle un gaz oxydant (O2 et O3) est acheminé à proximité du substrat de manière à y augmenter la pression tout en maintenant un vide élevé à proximité d'une source d'évaporation et de sources à cellules de Knudsen disposées dans l'enceinte sous vide où le substrat est chauffé et bombardé par un faisceau moléculaire d'atomes formant la pellicule d'oxyde, à l'exclusion des atomes d'oxygène, et provenant des cellules K et par un jet localisé de gaz oxydant dirigé à proximité dudit substrat.

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