H - Electricity – 01 – M
Patent
H - Electricity
01
M
H01M 8/04 (2006.01) H01M 8/24 (2006.01)
Patent
CA 2624778
The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires.,In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
La présente invention concerne des systèmes et des procédés pour la croissance et la récolte de nanofils. Un mode de réalisation concerne des procédés pour la croissance et le dopage de nanofils, notamment des procédés pour la croissance épitaxiale de nanofils orientés utilisant une combinaison de précurseurs de silicium ainsi que des substrats ornés de motifs pour faire croître des nanofils orientés. Un autre aspect de l'invention concerne des procédés permettant d'améliorer la qualité de nanofils en utilisant des couches de croissance sacrificielles. Un aspect supplémentaire de l'invention concerne des procédés permettant de transférer des nanofils d'un substrat à un autre substrat.
Nanosys Inc.
Robbins Virginia
Smart & Biggar
LandOfFree
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