Combination cmp-etch method for forming a thin planar layer...

Details Combination cmp-etch method for forming a thin planar layer... Combination cmp-etch method for forming a thin planar layer...

H - Electricity

01

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H01L 21/00 (2006.01) G02F 1/1335 (2006.01) H01L 21/3105 (2006.01) H01L 21/311 (2006.01) B24B 37/04 (2006.01)

Patent

CA 2355614

A combination CMP-etch method for forming a thin planar layer over the surface of a device includes the steps of providing a substrate including a plurality of surface projections defining gaps therebetween, forming an etchable layer on the substrate, performing a CMP process on the etchable layer to form a planar layer having a first thickness in excess of 1,000 Angstroms, and etching the planar layer to a second thickness less than 1,000 Angstroms.

Cette invention concerne une combinaison de polissage chimico-mécanique et de gravure utilisée pour la réalisation d'une mince couche plane sur la surface d'un dispositif. Ce procédé consiste à: sur un substrat comportant une pluralité de saillies séparées par des interstices, former une couche gravable procéder à un polissage chimico/mécanique de la couche gravable pour obtenir une couche plane présentant une première épaisseur de plus de 1000 Angströms; et graver la couche plane à une seconde épaisseur inférieure à 1000 Angströms.

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