Mask and method for manufacturing the same

Details Mask and method for manufacturing the same Mask and method for manufacturing the same

H - Electricity

01

L

H01L 21/32 (2006.01) G03F 1/14 (2006.01) H01J 37/317 (2006.01) H01L 21/027 (2006.01)

Patent

CA 2116805

A mask and a method far manufacturing the same, which can form a correct pattern on a semiconductor wafer having steps, includes a mask substrate having steps oppositely correspond with stepped structure on said semiconductor wafer and a opaque mask pattern for cutting off a light on a mask substrate where said steps is formed, to thereby enable the same exposure focus to be formed in step region and non-step region on a semiconductor wafer. Further, a clean and correct pattern can be formed by controlling the amount of exposure irradiated onto step region and non-step region on a semiconductor wafer.

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