Single mirror light-emitting diodes with enhanced intensity

Details Single mirror light-emitting diodes with enhanced intensity Single mirror light-emitting diodes with enhanced intensity

H - Electricity

01

L

H01L 33/00 (2006.01)

Patent

CA 2101128

This invention embodies single mirror light-emitting diodes (LEDs) with enhanced intensity. The LEDs are Group III-V and/or II-IV compound semiconductor structures with a single metallic mirror. The enhanced intensity is obtained by placing an active region of the LED having from two to ten, preferably from four to eight, quantum wells at an anti-node of the optical node of the device created by a nearby metallic mirror. Such multiquantum well LED structures exhibit enhanced efficiencies approaching that of a perfect isotropic emitter.

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