Primary flow cvd apparatus and method

Details Primary flow cvd apparatus and method Primary flow cvd apparatus and method

C - Chemistry, Metallurgy

23

C

C23C 16/02 (2006.01) C23C 16/452 (2006.01) C23C 16/455 (2006.01) H01L 21/205 (2006.01) C23C 16/44 (2006.01)

Patent

CA 2109198

A chemical vapor deposition (CVD) apparatus and method comprising a hot wall reaction tube, one or more reaction gas preheaters (34) and (42), a reaction gas exhaust outlet, and substantially eddy free reaction gas flow control means for passing reaction gases in a substantially laminar flow from preheaters to exhaust outlet. The gas flow control means includes tube flange (18) in a substantially eddy free relationship with the end of wafer boat zone (12), flange (18) having curved surface means extending from the end of wafer boat zone (121 to outer tube (2) for directing the reaction gas flow out of or into the reaction zone while maintaining the gas in a state of substantially laminar flow. The process comprises preheating reaction gases, mixing them, and passing them in laminar flow by wafers (14), avoiding all eddies in the reaction zone. Reaction gases can also be introduced at the downstream end of the reaction zone to offset reactant depletion.

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