Method for the production of a hetero-bipolar transistor,...

Details Method for the production of a hetero-bipolar transistor,... Method for the production of a hetero-bipolar transistor,...

H - Electricity

01

L

H01L 29/737 (2006.01) H01L 21/331 (2006.01)

Patent

CA 2484791

The invention relates to a hetero-bipolar transistor on Ga-As basis which has an advantageous design and to a method for producing the same which allows production of inexpensive and long-term stable components.

L'invention se rapporte à un transistor bipolaire à hétérojonction, en particulier à base de GaAs, qui présente une structure avantageuse, ainsi qu'à un procédé de production d'un transistor bipolaire à hétérojonction qui permet d'obtenir un composant avantageux et stable à long terme.

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