C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/195
C01B 21/068 (2006.01)
Patent
CA 2000949
- 21 - PROCESS FOR PRODUCING CRYSTALLINE SILICON NITRIDE POWDER Abstract A process for producing crystalline silicon nitride powder by a gas phase reaction of ammonia (NH3) and silane (SiH4) with a molar ratio of 7:1 or above at a temperature of 900°C or above and then heating the as-reacted amorphous powders at a temperature of 1350°C to 1800°C to convert the powders to a highly pure and submicron crystalline silicon nitride powder comprising at least a 90% .alpha.-Si3N4 phase. D-15936
Sim & Mcburney
Union Carbide Corporation
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