H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 23/52 (2006.01) H01L 23/522 (2006.01) H01L 23/528 (2006.01) H01L 23/532 (2006.01) H01L 29/02 (2006.01)
Patent
CA 2660191
A semiconductor apparatus is disclosed. The apparatus includes a first doped volume of semiconductor material, the first doped volume having a front surface and first and second adjacent regions. The first region has a first concentration of dopant and a first exposed area on the front surface. The second region has a second concentration of dopant and a second exposed area on the front surface, the second concentration being higher than the first concentration. The apparatus also includes a first external conductor and an alloy bonding the first external conductor to the second exposed area to ohmically connect the conductor to the second region.
La présente invention concerne un appareil semi-conducteur. L'appareil comprend un premier volume dopé de matériau semi-conducteur, le premier volume dopé comportant une surface avant et des première et seconde zones adjacentes. La première zone comporte une première concentration de dopant et une première aire exposée sur la surface avant. La seconde zone comporte une seconde concentration de dopant et une seconde aire exposée sur la surface avant, la seconde concentration étant supérieure à la première concentration. L'appareil comprend aussi un premier conducteur externe et un alliage reliant le premier conducteur externe à la seconde aire exposée pour connecter ohmiquement le conducteur à la seconde zone.
Day4 Energy Inc.
Fetherstonhaugh & Co.
LandOfFree
Semiconductor structure and process for forming ohmic... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor structure and process for forming ohmic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure and process for forming ohmic... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1861110