C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 8/36 (2006.01)
Patent
CA 2554921
The invention relates to a device for implanting ions in an aluminium alloy part (5), said device comprising an ion source (6) supplying ions accelerated by an extraction voltage, and first means for regulating (7-11) an initial beam (f1') of ions emitted by said source (6) to form an implantation beam (f1). The source (6) is an electronic cyclotronic resonance source generating the initial beam (f1') of multi-energy ions that are implanted in the part (5) at a temperature below 120 ·C. The implantation of said multi-energy ions of the implantation beam (f1) regulated by the regulating means (7-11) is simultaneously carried out at a depth controlled by the extraction voltage of the source.
L~invention concerne un dispositif d~implantation d~ions dans une pièce en alliage d~aluminium (5) comportant une source d~ions (6) délivrant des ions accélérés par une tension d~extraction et des premiers moyens de réglage (7-11) d~un faisceau initial (f1~) d~ions émis par ladite source (6) en un faisceau d~implantation (f1). Ladite source (6) est une source à résonance cyclotronique électronique produisant le faisceau initial (f1~) d~ions multi-énergies qui sont implantés dans la pièce (5) à une température inférieure à 120 ·C. L~implantation de ces ions multi-énergies du faisceau d~implantation (f1) réglé par l~intermédiaire des dits moyens de réglage (7-11) est effectuée simultanément à une profondeur contrôlée par la tension d~extraction de la source.
Busardo Denis
Guernalec Frederic
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
Societe Quertech Ingenierie (qi)
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