H - Electricity – 03 – K
Patent
H - Electricity
03
K
H03K 17/04 (2006.01) H03K 17/0412 (2006.01) H03K 17/16 (2006.01) H03K 17/687 (2006.01)
Patent
CA 2324695
The invention relates to transistor switching circuitry which allows to reduce the influence of the parasitic capacitance of the transistor and provides improved signal performance at high frequencies. The circuitry according to the first embodiment of the invention comprises an NMOS transistor whose source is connected to the input means having an output resistance R2, and whose drain is connected to the output means having an input resistance R3. The gate of the transistor is connected to a control means having an output resistance R1 and generating a control signal which opens or closes the transistor. By arranging that R1 » R2 (and assuming that R1 ~ R3), high frequency circuitry characteristics of the switching circuitry are dramatically improved. The switching circuitry of the invention provides high frequency voltage gain approaching unity and phase shift between the output and input voltages approaching zero, i.e. ensures no signal degradation. Ten alternative embodiments of the invention describe various implementations of the switching circuitry. The switching circuitry of the invention has numerous applications, e.g. in power down circuits, video or telephone switches, or any other application where the required frequency of switching may be lower than the transmitted frequency. Corresponding methods of connecting/disconnecting two circuitry points along a signal path and controlling voltage gain and phase shift characteristics are also provided.
Nortel Networks Limited
Ridout & Maybee Llp
LandOfFree
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