High purity aluminum conductor used at ultra low temperature

H - Electricity – 01 – B

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H01B 1/02 (2006.01) C22F 1/04 (2006.01) C30B 11/00 (2006.01) C30B 15/00 (2006.01)

Patent

CA 2127401

ABSTRACT OF THE DISCLOSURE The aluminum conductor having increase of its electric resistivity kept small at ultra low temperature of 30°K or lower even after cyclic strain is given at ultra low temperature, by controlling the crystal structure of the high purity aluminum conductor with purity of 99.9 - 99.9999 wt% so as to consist of (i) a veritable single or a substantially single crystal consisting of a bundle of sub-grains which have their crystal axes in the same direction or in the directions within a couple of degrees of deviation as a whole which has a specific crystal axis of <111> or <100> or the crystal axes close thereto in the longitudinal direction of the aluminum conductor, or (ii) a polycrystal most of which grains have respective specific crystal axes of <111> and/or <100>, or the crystal axes close thereto with respect to each grain in the longitudinal direction of the aluminum conductor, and have specific grain size of 0.01 mm to 3.0 mm.

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