Process for treating semiconductor fabrication reclaim

Details Process for treating semiconductor fabrication reclaim Process for treating semiconductor fabrication reclaim

C - Chemistry, Metallurgy

02

F

C02F 1/28 (2006.01)

Patent

CA 2231198

The hydrophilic organic contaminants and hydrogen peroxide present in semiconductor fabrication reclaims are removed by means of adsorption of a pyrolysate of a macroreticular sulphonated vinyl- aromatic polymer having a carbon content of at least 85% by weight and a carbon/hydrogen atomic ratio of from 1.5:1 to 20:1. In spite of their hydrophobic surface, the pyrolysates have a comparatively high adsorptivity for these contaminants and provide for distinctively higher removal rates than customary activated carbons.

Les impuretés organiques hydrophiles et le peroxyde d'hydrogène présents dans les eaux de rinçage issues de la fabrication de semi-conducteurs sont éliminés par adsorption sur un pyrolysat d'un polymère vinylaromatique sulfoné macroréticulaire ayant une teneur en carbone d'au moins 85 % en poids et présentant un rapport atomique carbone/hydrogène compris entre 1,5:1 et 20:1. Comparativement aux charbons actifs classiques, ces pyrolysats présentent, en dépit de leur surface hydrophobe, un pouvoir d'adsorption élevé à l'égard de ces impuretés et permettent d'en éliminer des quantités nettement plus importantes.

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