Photo-sensing device

Details Photo-sensing device Photo-sensing device

H - Electricity

01

L

H01L 31/06 (2006.01) H01L 31/0216 (2006.01) H01L 31/105 (2006.01)

Patent

CA 2050435

A low doped semiconductive layer is formed an a semiconductor substrate of a highly doped first conductivity type, and first region of a highly doped second conductivity type is selectively formed at a portion of the semiconductive layer. In a top-incidence type photo-sensing device having a pn junction area of the above structure as a photo-sensing region, the first region is surrounded by a second region of the second conductivity type formed at a portion of the semiconductor layer. The second region has the same or larger depth as or than that of the first region. Thus, even if a light is directed to the outside of the photo-sensing region, extra charges generated therein are absorbed by the second region and the flow of the extra charges into the photo-sensing region is prevented.

Couche de semi-conducteur faiblement dopée formée sur un substrat de semi-conducteur de type fortement dopé de première conductivité, et première zone de type fortement dopé de seconde conductivité formée de façon sélective dans une partie de la couche de semi-conducteur. Dans un dispositif photosensible de type très haute incidence ayant un lieu de jonction PN de la structure ci-dessus comme zone photosensible, la première zone est entourée d'une seconde région de type seconde conductivité formée dans une partie de la couche de semi-conducteur. La seconde zone a la même profondeur que celle de la première zone, ou la dépasse. Par conséquent, même si une lumière est dirigée vers l'extérieur de la zone photosensible, les charges supplémentaires produites sont absorbées par la seconde zone, et le flot de ces charges dans la zone photosensible est évité.

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