Floating gate memory cell with charge leakage prevention

Details Floating gate memory cell with charge leakage prevention Floating gate memory cell with charge leakage prevention

H - Electricity

01

L

H01L 29/788 (2006.01) H01L 21/8247 (2006.01) H01L 29/423 (2006.01)

Patent

CA 2259631

A process for fabricating a floating gate memory cell (60) with reduced charge leakage. An oxide regrowth (73) is formed over the sides of the floating gate (69) and is then covered with an oxide protective coating (64, 66). The structure is applicable to salicide and non-salicide memory cells and is especially useful in floating gate memory cells with gate stacks having abnormally shaped side walls.

L'invention porte sur un procédé de fabrication d'une cellule mémoire (60) à grille flottante à fuites de charges réduites. Une surépaisseur (73) d'oxyde est formée sur les côtés de la grille flottante (69) puis recouverte d'un revêtement protecteur de l'oxyde (64, 66). Cette structure peut s'appliquer aux cellules de mémoire à siliciure ou sans siliciure, et en particulier aux cellules mémoires à grille flottante dont les empilements de la grille présentent des parois latérales de forme anormale.

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