Method of separating wafers into individual die

Details Method of separating wafers into individual die Method of separating wafers into individual die

H - Electricity

01

L

H01L 51/40 (2006.01) H01L 21/304 (2006.01) H01L 21/78 (2006.01)

Patent

CA 2209884

A method of separating a wafer into individual die is disclosed. The wafer includes a substrate with organic thin-film multiple layers. A portion of the organic multiple layers is etched along a scribe line with excimer laser to form a groove to expose a portion of the substrate before sawing the substrate along the scribe line with a saw blade. Plasma etching or ion beam etching or sand blasting is an alternative to the excimer laser.

L'invention est une méthode de découpage de plaquettes pour former des puces individuelles. Chaque plaquette à découper comporte un substrat et plusieurs couches minces organiques. Une ligne de séparation est gravée dans une partie des couches organiques au moyen d'un laser à excimère pour exposer une partie du substrat avant le découpage de ce dernier. La gravure de la ligne de séparation peut également être effectuée au moyen d'un plasma, d'un faisceau d'ions ou d'un jet de sable.

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