Electron beam evaporation apparatus and method

Details Electron beam evaporation apparatus and method Electron beam evaporation apparatus and method

H - Electricity

01

J

H01J 9/02 (2006.01) C23C 14/30 (2006.01)

Patent

CA 2185640

The invention discloses an apparatus for depositing a Spindt emitter forming substance on a field emission source substrate by electron beam evaporation so that a maximum allowed deposition angle is not exceeded. The apparatus comprises at least one electron beam evaporation source located opposite to the substrate to deposit the substance on at least two regions of the substrate located adjacent to one another. At least one partition is configured to isolate at least one vapor cloud emanating from said at least one electron beam evaporation source so that deposition on each one of said at least two regions does not exceed to maximum allowed deposition angle in other of said at least two regions. The at least one electron beam evaporation source is spaced from the substrate a source to substrate distance so that the maximum allowed deposition angle is not exceed in each of the at least two regions of the substrate. The source to substrate distance is less than that required to not exceed the maximum allowed deposition angle had a single electron beam evaporation source been used to simultaneously deposit the substance on said at least two regions of the substrate.

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