H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/82 (2006.01) G11C 11/56 (2006.01) H01L 43/00 (2006.01) H01L 43/08 (2006.01)
Patent
CA 2270896
A double tunnel junction is disclosed that can be used as a magnetic sensor or as random access memories. The preferred embodiment comprises three magnetic metal materials (16, 18 and 20) separated by two insulating layers (12 and 14). A current is passed through the first tunnel junction thereby developing a voltage in the second junction. The resistance of this device can be changed over a 100 % when an external magnetic field of just a few gauss is applied.
Cette invention se rapporte à une double jonction tunnel qui peut servir en tant que capteur magnétique ou en tant que mémoires à accès aléatoire. La réalisation préférée de l'invention comporte trois matières métalliques magnétiques séparées par deux couches isolantes. On fait passer un courant à travers la première jonction tunnel de manière à générer une tension dans la seconde jonction. On peut modifier la résistance de ce dispositif par plus de 100 % en appliquant un champ magnétique externe de seulement quelques gauss.
Borden Ladner Gervais Llp
Chui Siu-Tat
LandOfFree
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