H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/306 (2006.01) B24B 37/04 (2006.01) H01L 21/3105 (2006.01) H01L 21/321 (2006.01)
Patent
CA 2407300
A method of modifying a surface of a semiconductor wafer is disclosed. The method includes: (a) contacting the wafer with a fixed abrasive article in the presence of a composition that includes water and a polar component having from 1 to 10 functional groups selected from the group consisting of -OH, - OOH, =O, and combinations thereof, and from 1 to 10 consecutive groups selected from the group consisting of -CH2-, -CH2O-, -C2H4O-, -C3H6O- and combinations thereof; and (b) relatively moving the wafer and the fixed abrasive article to modify the surface of the wafer.
L'invention concerne un procédé permettant de modifier la surface d'une plaquette semi-conductrice. Ce procédé consiste (a) à mettre en contact la plaquette avec un article abrasif fixé en présence d'une composition contenant de l'eau et un composant polaire présentant de 1 à 10 groupes fonctionnels choisis dans le groupe comprenant -OH, -OOH, =O, et des combinaisons de ceux-ci, et de 1 à 10 groupes consécutifs choisis dans le groupe comprenant -CH2-, -CH2O-, -C2H4O-, -C3H6O- et des combinaisons de ceux-ci; et (b) à déplacer de manière relative la plaquette et l'article abrasif fixé de manière à modifier la surface de la plaquette.
3m Innovative Properties Company
Smart & Biggar
LandOfFree
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