Semiconductor device and a method for fabricating the same

Details Semiconductor device and a method for fabricating the same Semiconductor device and a method for fabricating the same

H - Electricity

01

L

356/147

H01L 27/04 (2006.01) H01L 21/72 (1990.01)

Patent

CA 2035910

Abstract of the Disclosure A semiconductor device comprising a plurality of elemental active devices being operable with different threshold voltages is disclosed. Each of the elemental active devices, e.g. D made and E made HEMT, is formed of each of different active layers epitaxially grown on each of different regions of a semiconductor substrate. Since the different regions have different surface orientations or surface areas, each of the different active layers have different carrier densities corresponding to the surface orientation or the surface areas.

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