Compound semiconductor device

Details Compound semiconductor device Compound semiconductor device

H - Electricity

01

L

H01L 29/778 (2006.01) H01L 29/08 (2006.01) H01L 29/36 (2006.01)

Patent

CA 2078941

A compound semiconductor device includes an undoped semiconductor layer; a doped semiconductor layer formed on the undoped semiconductor layer and having smaller electron affinity than the undoped semiconductor layer, impurities being doped in the doped semiconductor layer; a gate electrode formed on the doped semiconductor layer; and a source electrode and a drain electrode respectively formed at both sides of the gate electrode, wherein an impurity concentration of the doped semiconductor layer is selected such that a portion of the doped semiconductor layer located immediately below the gate electrode is not completely depleted in a state in which a gate voltage is not applied to the gate electrode, and is completely depleted in a state in which a negative voltage for minimizing a noise figure is applied to the gate electrode.

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