G - Physics – 11 – C
Patent
G - Physics
11
C
352/81
G11C 11/416 (2006.01) G11C 8/16 (2006.01) G11C 11/411 (2006.01)
Patent
CA 2012014
ABSTRACT OF THE DISCLOSURE A READ-WHILE-WRITE current-mode logic RAM cell suitable for use in a RAM device having the ability to simultaneously write and read data. The RAM cell contains a bit-cell consisting of flip- flop configured transistors differentially connected to a constant current source, a multiple-emitter transistor network tied to each bit-cell load resistor which prevents the bit-cell from saturating, separate READ and WRITE data lines, and READ and WRITE buffer transistors having READ and WRITE control lines.
Birrittella Mark S.
Wikstrom Jan A.
Birrittella Mark S.
Cray Research Inc.
Gowling Lafleur Henderson Llp
Wikstrom Jan A.
LandOfFree
Read-while-write ram cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Read-while-write ram cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Read-while-write ram cell will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1937112