High-frequency smd transistor having two emitter terminals

H - Electricity – 01 – L

Patent

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356/124

H01L 27/02 (2006.01) H01L 23/495 (2006.01) H01L 23/66 (2006.01)

Patent

CA 2035214

ABSTRACT OF THE DISCLOSURE A high-frequency SMD transistor has two emitter terminals, whereby a semiconductor transistor chip is secured on a lead frame and is contacted to electrical terminals on the lead frame. The connection should have the lowest, technically- possible emitter inductance. The two emitter terminals of the high-frequency SMD transistor are fashioned of one piece within the lead frame. The two electrical connections are present between the emitter of the semiconductor transistor chip and the two emitter terminals fashioned as a single piece.

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