Method and installation for refining silicon

Details Method and installation for refining silicon Method and installation for refining silicon

C - Chemistry, Metallurgy

01

B

C01B 33/037 (2006.01)

Patent

CA 2315019

The invention concerns a method for refining silicon, consisting in filling a cold induction crucible (1) with solid silicon; liquefying the crucible content; carrying out, using the induction crucible, a turbulent mixing of the silicon bath (b) by bringing up the liquid from the bottom of the crucible towards the free surface along the crucible central axis; directing a plasma (f) generated by an induction plasma torch (2) towards the bath surface for a time interval enabling the elimination of impurities for which the plasma reactive gas (g r) is adapted.

L'invention concerne un procédé d'affinage du silicium, consistant à remplir un creuset froid inductif (1) de silicium solide; à liquéfier le contenu du creuset; à organiser, au moyen du creuset inductif, un brassage turbulent du bain de silicium (b) en amenant le liquide depuis le fond du creuset vers la surface libre en remontant le long de l'axe central du creuset; et à diriger un plasma (f) produit par une torche à plasma inductive (2) vers la surface du bain pendant une durée permettant l'élimination d'impuretés pour lesquelles le gaz réactif (gr) du plasma est adapté.

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