G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 5/06 (2006.01) G11C 8/14 (2006.01) H01L 21/8242 (2006.01) H01L 23/522 (2006.01) H01L 27/02 (2006.01) H01L 27/11 (2006.01) H01L 27/108 (2006.01)
Patent
CA 2342496
A high density wordline packing arrangement is obtained by routing three primary metal-2 wordline straps in the same space as four polysilicon wordlines, and routing the fourth wordline strap in a metal-4 layer over the primary metal-2 wordline straps. Stitches in metal-3 connect metal-2 primary wordline straps to metal-4 wordline straps. Therefore, contact spacing and metal pitch limitations are relaxed to allow four metal wordline straps to occupy the same pitch as four polysilicon wordlines. The wordlines are twisted to keep them fully balanced and to minimise coupling between wordline straps and neighbouring power and signal lines. Hence, a smaller memory cell array can be formed according to the wordline packing arrangement of the present invention.
Atmos Corporation
Borden Ladner Gervais Llp
Kurjanowicz Wlodek
LandOfFree
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