Method of fabricating a semiconductor mesa device

Details Method of fabricating a semiconductor mesa device Method of fabricating a semiconductor mesa device

H - Electricity

01

L

H01L 21/302 (2006.01) H01S 5/10 (2006.01) H01S 5/227 (2006.01) H01S 5/20 (2006.01)

Patent

CA 2315582

The invention is a method of fabricating a semiconductor device involving selectively etching at least a first semiconductor layer on a semiconductor wafer so as to perform a lateral taper etch in said layer, forming a second layer over the resulting etched region so as to planarize the etched area, and subsequently performing a second etch over a portion of the etched region so as to form a mesa geometry. This material allows device fabrication with a lateral taper, beneficial to monolithic integration of devices, such as expanded beam lasers, while reducing or eliminating unwanted increases in mesa width (mesa bulge) resulting from the lateral taper.

Affiliated with

Also associated with

Rating

Method of fabricating a semiconductor mesa device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a semiconductor mesa device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a semiconductor mesa device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1978039