Method for utilizing heavily doped silicon feedstock to...

Details Method for utilizing heavily doped silicon feedstock to... Method for utilizing heavily doped silicon feedstock to...

H - Electricity

01

L

H01L 31/18 (2006.01) H01L 21/66 (2006.01) H01L 31/042 (2006.01)

Patent

CA 2680468

A method for using relatively low-cost silicon with low metal impurity concentration by adding a measured amount of dopant and or dopants before and/or during silicon crystal growth so as to nearly balance, or compensate, the p-type and n-type dopants in the crystal, thereby controlling the net doping concentration within an acceptable range for manufacturing high efficiency solar cells.

La présente invention concerne un procédé d'utilisation de silicium relativement bon marché ayant une faible concentration en impuretés métalliques par ajout d'une quantité mesurée de dopant ou de dopants avant et/ou pendant la croissance cristalline du silicium pour pratiquement équilibrer, ou compenser, les dopants de type p et de type n dans le cristal, contrôlant ainsi la concentration de dopage nette à l'intérieur d'une plage acceptable pour la fabrication de cellules solaires très efficaces.

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