H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/20 (2006.01) C30B 29/38 (2006.01) H01L 29/201 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2633118
This invention provides an AlxGayIn1-x-yN crystal substrate (12) having a main plane (12m) having an area of not less than 10 cm2. The main plane (12m) has an outer area (12w) which is within 5 mm from the outer periphery and an inner area (12n) which is an area other than the outer area. The inner area (12n) has a total dislocation density of not less than 1 ~ 102 cm-2 and not more than 1 ~ 106 cm-2. The above constitution can provide an AlxGayIn1-x-yN crystal substrate as a semiconductor device, which is large and has suitable dislocation density, a semiconductor device comprising the AlxGayIn1-x-yN crystal substrate, and a method for manufacturing the same.
La présente invention concerne un substrat cristallin (12) à l~AlxGayIn1-x-yN comportant un plan principal (12m) dont l'aire est supérieure ou égale à 10 cm2. Le plan principal (12m) présente une aire extérieure (12w) qui est située dans une bande de 5 mm depuis la périphérie extérieure et une aire intérieure (12n) qui est une aire différente de l~aire extérieure. L~aire intérieure (12n) présente une densité de dislocation totale comprise entre 1 × 102 cm-2 et 1 × 106 cm-2. La constitution ci-dessus permet d~obtenir un substrat cristallin à l'AlxGayIn1-x-yN comme dispositif semi-conducteur, qui est large et présente une densité de dislocation adaptée, un dispositif semi-conducteur comprenant le substrat cristallin à l~AlxGayIn1-x-yN, et son procédé de fabrication.
Fujiwara Shinsuke
Hashimoto Shin
Nishioka Muneyuki
Okahisa Takuji
Okui Manabu
Marks & Clerk
Sumotomo Electric Industries Ltd.
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