H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/04 (2006.01) H01L 21/20 (2006.01) H01L 21/336 (2006.01) H01L 29/786 (2006.01)
Patent
CA 2090096
In the crystal structure of a polysilicon thin film having a field effect mobility µFE of about 80 cm2/V~sec, a grain size is about 200 nm and a crystallite size on the (111) plane is about 180 nm. The crystal size corresponds to the size of a completely monocrystallized portion of a grain. The condition of obtaining a field effect mobility µFE of about 80 cm2/V~sec is that the crystallite size on the (111) plane is at least 180 nm (measured value). By taking the crystallite size into consideration, it becomes possible to achieve a high field effect mobility µFE which cannot be obtained merely by increasing the grain size.
Dans la structure cristalline d'une mince pellicule en silicium polycristallin à mobilité à effet de champ µFE d'environ 80 cm2/V seconde, la taille d'un grain est d'environ 200 nm et celle de la cristallite dans le plan (111) est d'environ 180 nm. La taille du cristal correspond à la taille d'une partie d'un grain entièrement monocristallisé. Pour obtenir une mobilité à effet de champµFE d'environ 80 cm2/V seconde, la taille de la cristallite dans le plan (111) doit être d'au moins 180 nm (valeur mesurée). En prenant en compte la taille de la cristallite, il est possible d'obtenir une mobilité à effet de champµFE qui ne pourrait pas être atteinte simplement en augmentant la taille du grain.
Casio Computer Co. Ltd.
Ridout & Maybee Llp
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