Liquid phase epitaxy method and apparatus

Details Liquid phase epitaxy method and apparatus Liquid phase epitaxy method and apparatus

B - Operations, Transporting

05

C

356/178

B05C 3/09 (2006.01) C30B 19/06 (2006.01) C30B 19/10 (2006.01) H01L 21/20 (2006.01)

Patent

CA 1160762

Abstract of the Disclosure An apparatus and method for making epitaxially grown semiconductor devices has a block having a slot hole for holding a semiconductor substrate therein. A solution container with a predetermined number of holes to contain semiconductor solutions therein is slidably disposed on the block. The slot hole has walls having a considerable angle with respect to a horizontal plane and has a solution inlet at the top part of said slot hole and a solu- tion outlet at the bottom part of said slot hole, and has a means to hold said substrate with its principal face substantially par- allel to the walls. Successive epitaxial growth solutions are introduced seriatim into the slot through the inlet, epitaxial growth occurs on the substrate, the solutions are removed through the outlet.

338042

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