Power semiconductor device with heat dissipating property

H - Electricity – 01 – L

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356/112

H01L 23/34 (2006.01) H01L 23/427 (2006.01)

Patent

CA 2035724

A power semiconductor device such as power thyristor including a semiconductor substrate which is clamped by first and second conductive members serving as the electrodes as well as heat sinks, and a plurality of heat pipes whose one ends are inserted directly into the conductive members. A plurality of semiconductor substrates and temperature compensating plates are alternatively stacked one on another and conductive members are provided on outermost temperature compensat- ing plates to form an assembly. The assembly is hermetically sealed by an insulating package formed by an insulator having a corrugated outer surface such that outer surfaces of the conductive members are exposed out of the package. One or more heat pipes are inserted into the insulating package such that electrically insulating cooling medium filled in the heat pipes can be directly made into contact with the semiconductor substrates. The heat pipes may be inserted into the conductive members or heat sinks provided in the assembly.

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