C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/35 (2006.01) H01J 37/34 (2006.01)
Patent
CA 2108673
2108673 9218663 PCTABS00017 An emission enhanced sputtering magnetron apparatus (10) includes an elongated rod or bar like cathode (12) jacketed by a target material (28). An electron emission enhancement device (34) positioned around the end (55) of the elongated cathode (12) creates a thin, highly uniform plasma sheath along the remainder of the cathode (12), thereby enhancing the sputtering rate along the entire length of the cathode target material. A low voltage, high current AC or DC magnet supply (50) connected across the elongated cathode (12) generates a plasma-confining magnetic field circumferentially around the entire length of the cathode (12). In an alternate embodiment, a single elongated tube or bar of the target material can be conformed into the cathode, the electron emission enhancing device, and a working end portion that can be formed into nearly any shape to conform to the shape of the surface being coated with the target material.
Smart & Biggar
Surface Solutions Incorporated
LandOfFree
Method and apparatus for linear magnetron sputtering does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for linear magnetron sputtering, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for linear magnetron sputtering will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1998024