Photon detector and method of manufacturing it

Details Photon detector and method of manufacturing it Photon detector and method of manufacturing it

G - Physics

01

J

G01J 1/42 (2006.01) H01L 31/0392 (2006.01) H01L 31/08 (2006.01) H04N 5/30 (2006.01)

Patent

CA 2255862

In a photon detector wherein material of light-dependent conductivity is disposed between electrically conductive connections, the material is nanocrystalline composite material, said nanocrystalline composite material, in the process according to the invention, being applied to a substrate by corpuscular-beam-induced deposition, organo- metallic compounds being used as starting materials, said organo-metallic compounds being adsorbed on the surface of the substrate owing to their high vapor pressure.

L'invention concerne un détecteur de photons dans lequel un matériau à conductivité dépendant de la lumière est disposé entre des connexions électroconductrices. Ce matériau est un matériau composite nanocristallin, appliqué selon ledit procédé sur un support, par dépôt induit par rayonnement corpusculaire. Toutes les substances de départ utilisées sont des composés organométalliques qui sont absorbés sur la surface du support en raison de leur pression de vapeur élevée.

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