H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/227 (2006.01) H01L 33/00 (2006.01) H01S 5/026 (2006.01) H01S 5/20 (2006.01) H01S 5/22 (2006.01) H01S 5/40 (2006.01)
Patent
CA 2296594
A semiconductor photonic element is provided, which realize low threshold current and satisfactory characteristics in the high temperatures and/or high output operating condition. This element is comprised of (a) a semiconductor substrate; (b) a mesa structure formed on a first surface of the substrate to extend in a specific direction; the mesa structure including an active layer and a pair of p- and n-type cladding layers located respectively at top and bottom sides of the active layer, forming a double heterojunction; (c)a current-constricting structure for constricting an injection current formed at each side of the mesa structure to expose a top of the mesa structure from the current-constricting structure; the current-constricting structure comprising a first current-blocking part and a second current-blocking part; the first current-blocking part having a dielectric current-blocking layer that extends to the mesa structure; the dielectric current-blocking layer being contacted with top edges of the mesa structure; the second current-blocking part having a semiconductor current-blocking layer; and (d) a semiconductor burying layer formed to cover the mesa structure and the multilayer current-constricting structure; the semiconductor burying layer being contacted with the top of the mesa structure. -61-
Kudo Koji
Tsuji Masayoshi
Yokoyama Yoshitaka
Corporation Nec
G. Ronald Bell & Associates
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