Anti-reflective substrate and the manufacturing method thereof

H - Electricity – 01 – L

Patent

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Details

H01L 21/64 (2006.01) H01L 31/00 (2006.01) H01L 31/0232 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2541879

The present invention is to provide an anti-reflective substrate, and the manufacturing method of the substrate. The method comprises the steps of: (a) providing a substrate; (b) depositing an amorphous silicon layer on the substrate; and (c) etching the amorphous silicon layer and the substrate by chemical etching in solutions, and the amorphous silicon layer is removed by the solutions. The effective reflectance of the anti-reflective substrate produced from the method of the present invention can be lower than 1%, and the absorption rate of the anti-reflective substrate is preferably from 70% to 90% in a wavelength range of 300nm-900nm.

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