Semiconductor device

Details Semiconductor device Semiconductor device

H - Electricity

01

L

345/26

H01L 31/02 (2006.01) H01L 27/144 (2006.01) H01L 31/105 (2006.01) H03F 3/08 (2006.01)

Patent

CA 2005618

Abstract of the Disclosure In a high impedance type light receiver circuit comprising a light receiving device, an amplifier circuit for amplifying an output of the light receiving device and an equalizer for band compensation, a capacitor of the equalizer is formed by the same PN junction structure as that of the light receiving device, and the light receiving device, the amplifier circuit and the equalizer are integrated on one semiconductor substrate so that adjustment of a time constant of the equalizer is not necessary. In this manner, the productivity if the high impedance type light receiver circuit which can attain a higher sensitivity than a trans-impedance type circuit is improved.

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