Semiconductor device for improving high-frequency...

Details Semiconductor device for improving high-frequency... Semiconductor device for improving high-frequency...

H - Electricity

01

L

H01L 27/08 (2006.01) H01L 27/085 (2006.01) H01L 29/417 (2006.01) H01L 29/423 (2006.01) H03F 3/193 (2006.01) H03F 3/195 (2006.01)

Patent

CA 2058672

A semiconductor device comprises a plurality of gate electrodes, drain electrodes, and source electrodes axi-symmetrically formed on opposite sides of a gate pad and drain pad. Two source pads are arranged at ends of these electrodes, to which the source electrodes are connected, so that a gate width can be shortened. Therefore, an output power, gain, etc., can be increased, and the high-frequency characteristics can be improved. Further, when arranging a plurality of semiconductor devices in parallel, the semiconductor chip can be formed in the shape of a square, i.e., the aspect ratio thereof can be reduced, and therefore, cracks in the semiconductor chip (semiconductor device) can be avoided.

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