H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/337 (2006.01) H01L 29/417 (2006.01) H01L 29/808 (2006.01)
Patent
CA 2717077
A JFET is a semiconductor device allowing more reliable implementation of the characteristics essentially achievable by employing SiC as a material and includes a wafer having at least an upper surface made of silicon carbide, and a gate contact electrode formed on the upper surface. The wafer includes a first p-type region serving as an ion implantation region formed so as to include the upper surface. The first p-type region includes a base region disposed so as to include the upper surface, and a protruding region. The base region has a width (w1) in the direction along the upper surface greater than a width (w2) of the protruding region. The gate contact electrode is disposed in contact with the first p-type region such that the gate contact electrode is entirely located on the first p-type region as seen in plan view.
SiC???????????????????????????????????????????JFET(1)???????????(14A)????????????(10)??????(14A)?????????????????(21)?????????(10)??????(14A)??????????????????????1?p???(16)?????1?p???(16)??????(14A)????????????????(16A)??????(16B)??????????(16A)??????(14A)???????????(w1)??????(16B)??(w2)????????????????(21)??????????????1?p???(16)?????????1?p???(16)?????????????
Fujikawa Kazuhiro
Harada Shin
Namikawa Yasuo
Tamaso Hideto
Marks & Clerk
Sumitomo Electric Industries Ltd.
LandOfFree
Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-2034933