C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 1/04 (2006.01) C22C 1/00 (2006.01) C22C 28/00 (2006.01)
Patent
CA 2675178
The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX2 in a conventional tube furnace. Also included is a method of preparing free standing silicon germanium nanocrystals by the acid etching product of the product of the thermal disproportionation of a siliceous material and GeX2.
La présente invention concerne un procédé de préparation de nanocristaux d'alliage de silicium - germanium par dismutation thermique simultanée d'un matériau siliceux et de GeX2 dans un four à tube classique. L'invention concerne également un procédé de préparation de nanocristaux de silicium - germanium libres par le produit d'attaque à l'acide du produit de la dismutation thermique d'un matériau siliceux et de GeX2.
Henderson Eric James
Veinot Jonathan Gordon Conn
Gowling Lafleur Henderson Llp
Henderson Eric James
The Governors Of The University Of Alberta
Veinot Jonathan Gordon Conn
LandOfFree
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