Methods for preparing silicon germanium alloy nanocrystals

C - Chemistry – Metallurgy – 30 – B

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C30B 1/04 (2006.01) C22C 1/00 (2006.01) C22C 28/00 (2006.01)

Patent

CA 2675178

The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX2 in a conventional tube furnace. Also included is a method of preparing free standing silicon germanium nanocrystals by the acid etching product of the product of the thermal disproportionation of a siliceous material and GeX2.

La présente invention concerne un procédé de préparation de nanocristaux d'alliage de silicium - germanium par dismutation thermique simultanée d'un matériau siliceux et de GeX2 dans un four à tube classique. L'invention concerne également un procédé de préparation de nanocristaux de silicium - germanium libres par le produit d'attaque à l'acide du produit de la dismutation thermique d'un matériau siliceux et de GeX2.

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