Tape cast silicon carbide dummy wafer

Details Tape cast silicon carbide dummy wafer Tape cast silicon carbide dummy wafer

C - Chemistry, Metallurgy

04

B

C04B 38/00 (2006.01) C04B 35/573 (2006.01) C04B 41/87 (2006.01)

Patent

CA 2246803

This invention relates to tape casting a silicon carbide slip to eventually produce a silicon carbide wafer having a thickness of between 0.5 and 1 mm and a diameter of at least 100 mm, the wafer preferably having a strength of at least 30 MPa, and a porosity wherein at least 85 % of the pores are no larger than 12 microns.

La présente invention concerne la fonte en bande d'un ruban de carbure de silicium pour produire en fin de processus une plaquette de carbure de silicium dont l'épaisseur se situe entre 0,5 et 1 mm pour un diamètre d'au moins 100 mm. Une telle plaquette résiste à une pression d'au moins 30 MPa, et sa porosité est telle qu'au moins 85 % des pores ne font pas plus de 12 microns.

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