Method of forming patterned silicone rubber layer

Details Method of forming patterned silicone rubber layer Method of forming patterned silicone rubber layer

H - Electricity

01

L

356/165

H01L 21/465 (2006.01) H01L 21/311 (2006.01) H01L 21/312 (2006.01) H01L 23/29 (2006.01)

Patent

CA 2006175

ABSTRACT OF THE DISCLOSURE The present invention provides a method of forming a patterned silicone rubber layer on a surface of a workpiece such as a silicon wafer. According to the method, a polyimide film is first formed on the workpiece surface, and subsequently etched by lithography in a predetermined pattern. Then, a silicone rubber layer is formed on the workpiece surface over the patterned polyimide film by spin coating, and thereafter etched by plasma etching until the patterned polyimide film is exposed. Finally, the remaining polyimide film alone is completely etched away, so that the pattern previously given to the polyimide film is copied to the silicone rubber layer in a negative fashion.

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