Zeolite layers with controlled crystal width and preferred...

B - Operations – Transporting – 01 – J

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B01J 20/18 (2006.01) B01D 53/22 (2006.01) B01D 67/00 (2006.01) B01D 71/02 (2006.01) B01J 20/32 (2006.01) B01J 29/74 (2006.01) B01J 37/02 (2006.01) C01B 33/00 (2006.01) C01B 39/00 (2006.01) C07C 5/32 (2006.01) C07C 11/02 (2006.01) C07C 15/02 (2006.01) C07C 15/46 (2006.01)

Patent

CA 2192232

The present invention is directed toward a new zeo- lite composition having coated thereon a mesoporous growth enhancing layer and a layer of zeolite crystals on said meso- porous growth enhancing layer, and wherein said meso- porous growth enhancing layer comprises nanocrystalline or colloidal sized zeolites, nanocrystalline or colloidal zeolite and metal oxide, or nanocrystalline or colloidal zeolite and colloidal metal, or nanocrystalline or colloidal zeolite col- loidal metal and metal oxide, and wherein said mesoporous growth enhancing layer has interstices of about 20 to about 2000 .ANG., and wherein said zeolite layer s a polycrystalline layer of oriented crystals with similar habit wherein 99,9 % of said zeolite crystals have at least one point between adja- cent crystals that is 20 .ANG.. The invention is further directed to a process of producing and using the composition.

Nouvelle composition de zéolite recouverte d'une couche mésoporeuse favorisant la croissance cristalline et d'une couche de cristaux de zéolite sur ladite couche mésoporeuse favorisant la croissance cristalline. Ladite couche mésoporeuse comprend des zéolites nanocristallines ou de taille colloïdale, de l'oxyde de métal et de la zéolite nanocristalline ou colloïdale, ou de la zéolite nanocristalline ou colloïdale et du métal colloïdal, ou de la zéolite nanocristalline ou colloïdale, du métal colloïdal et de l'oxyde métallique. Elle possède des interstices d'environ 20 à environ 2000 .ANG.. Ladite couche de zéolite est une couche polycristalline de cristaux orientés à faciès cristallin similaire, 99,9 % desdits cristaux de zéolite ayant au moins un point entre des cristaux adjacents qui est de <= 20 .ANG.. La présente invention concerne en outre un procédé de production et d'utilisation de ladite composition.

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