Infrared-rays sensor and manufacturing method therefor

Details Infrared-rays sensor and manufacturing method therefor Infrared-rays sensor and manufacturing method therefor

G - Physics

01

J

G01J 5/20 (2006.01) G01J 1/42 (2006.01) H01L 27/146 (2006.01) H01L 31/101 (2006.01) H01L 31/18 (2006.01) H04N 5/335 (2006.01)

Patent

CA 2163731

In order to improve sensitivities of a heat- sensitive semiconductor layer for detecting and absorbing infrared rays in an infrared-rays sensor, the sensor comprises a substrate, an insulator layer formed on the substrate, a heat-sensitive semiconductor layer formed on the insulator layer, the layer comprising a the semiconductor layer having electrical resistance depending on temperature with a relatively large temperature coefficient of resistance, and high concentration impurity layers interposing the semiconduc- tor layer, and an electrode connected to the high-concentra- tion impurity layer. Thus, the heat-sensitive semiconductor layer itself detects both detection and absorption with or without providing any heat-absorbing layer to detect infrared rays only by the heat-sensitive semiconductor layer.

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